2012. 7. 24 1/2 semiconductor technical data smab33 schottky barrier type diode revision no : 4 switching type power supply applications. features h low profile surface mount package. h low power loss, high efficiency. h for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. application h switching power supply. h dc/dc converter. h home appliances, office equipment. h telecommunication. maximum rating (ta=25 ? ) sma dim millimeters a b c d e f g 4.5 0.2 2.6 0.2 1.5 0.2 5.0 0.3 1.2 0.3 2.0 0.2 0 ~ 0.15 h r 0.5 a b c h d e e 1 2 f g + _ + _ + _ + _ + _ + _ 1. anode 2. cathode electrical characteristics (ta=25 ? ) type name marking b 3 3 lot no. characteristic symbol test condition min. typ. max. unit peak forward voltage v fm i fm =3.0a - - 0.45 v repetitive peak reverse current i rrm v rrm =rated - - 2.0 ma thermal resistance r th(j-1) junction to lead - - 23 ? /w r th(j-a) junction to ambient (on alumina substrate) - - 108 characteristic symbol rating unit maximum repetitive peak reverse voltage v rrm 30 v average output rectitifed current i o 3 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 70 a junction temperature t j -55 q 125 ? storage temperature range t stg -55 q 150 ?
2012. 7. 24 2/2 smab33 revision no : 4 number of cycles at 60hz peak surge forward current i (a) 1 0 20 40 80 60 fsm 10 surge forward current (non - repetitive) 100 ta=25 c f=60hz p - i f(av) f(av) f(av) average forward current i (a) 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 f(av) average forward power dissipation p (w) 0.6 1.2 1.8 2.4 3.0 3.6 rectangular waveform 180 360 ta - i f(av) f ( av ) average forward current i (a) 0 0 20 40 60 80 100 120 140 maximum allowable temperature ta max ( c) 0.6 1.2 1.8 2.4 3.0 3.6 rectangular waveform 180 360 i - v ff f forward voltage v (v) f forward current i (a) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 0.1 0.3 0.5 1 3 5 t =125 c 25 c j
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